Skip to main content
SpringerLink
Log in

Photoconductivity of the germanium-doped solid solution p-GaAs0.94Sb0.06

  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

A new mechanism of impurity photoconductivity in semiconductors has been discovered. The form of the long-wavelength photoconductivity spectra observed in p-GaAs0.94Sb0.06: Ge is satisfactorily explained in terms of resonance ionization of impurity levels by phonons excited during absorption of infrared radiation.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. T. Yu. Allen and T. A. Polyanskaya, Fiz. Tekh. Poluprovodn. 31, 405 (1997) [Semiconductors 31, 405 (1997)].

    Google Scholar 

  2. D. J. Ashen, P. J. Dean, D. T. J. Hurle, J. B. Mullin, and A. M. White, J. Phys. Chem. Sol. 36 1041 (1975).

    Article  Google Scholar 

  3. V. Spitzer, in Optical Properties of Semiconductors, edited by R. Willardson and A. Beer [Russian translation], Mir, Moscow, 1970, p. 28.

    Google Scholar 

  4. G. Dolling and WJ. L. T. Waugh, in Lattice Dynamics, edited by R. F. Wallis (Pergamon Press, 1965) p. 19.

  5. A. Baldereschi and N. O. Lipari, Phys. Rev. B 9, 1525 (1974).

    Article  ADS  Google Scholar 

  6. Landolt-Bornstein, Numerical Data and Functional Relationship in Science and Technology. New Series: Group III, V. 17; subsol. a: Physics of Group IV Elements and III–V Compounds, edited by O. Madelung, Springer-Verlag (1982).

Download references

Author information

Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    T. Yu. Allen & T. A. Polyanskaya

  2. Electrical Engineering University, 197376, St. Petersburg, Russia

    A. A. Kopylov & A. A. Shakmaev

  3. University of Tennessee at Chattanooga, Chattanooga, TN, 37403, USA

    T. Yu. Allen

Authors
  1. T. Yu. Allen
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. T. A. Polyanskaya
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. A. Kopylov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. A. A. Shakmaev
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Fiz. Tekh. Poluprovodn. 31, 475–477 (April 1997)

Rights and permissions

Reprints and permissions

About this article

Cite this article

Allen, T.Y., Polyanskaya, T.A., Kopylov, A.A. et al. Photoconductivity of the germanium-doped solid solution p-GaAs0.94Sb0.06 . Semiconductors 31, 405–406 (1997). https://doi.org/10.1134/1.1187172

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1187172

Keywords

Search

Navigation