Abstract
The dependences of the characteristic superradiance time in quantum well InGaAs/GaAs laser heterostructures on the pump current, temperature, and cross sections of the active region are studied by analyzing electroluminescence spectra. The number of dipoles involved in forming a superradiant pulse is estimated using elementary equations from the theory of superradiance in two-level systems. A mechanism is proposed for superradiance in semiconductors.
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Fiz. Tekh. Poluprovodn. 33, 1456–1461 (December 1999)
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Zaitsev, S.V., Graham, L.A., Huffaker, D.L. et al. Superradiance in semiconductors. Semiconductors 33, 1309–1314 (1999). https://doi.org/10.1134/1.1187914
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DOI: https://doi.org/10.1134/1.1187914