Abstract
High-quality type II Ga0.83In0.17As0.22Sb0.78/InAs heterostructures based on GaSb-rich quaternary solid solutions were grown by liquid phase epitaxy on InAs(001) substrates. GaInAsSb epilayers were grown under planar two-dimensional growth conditions with abrupt and planar interfaces. The thickness of the transition layer on the Ga0.83In0.17As0.22Sb0.78/InAs interface enriched with In and Sb was 10–12 Å in perfect structures. The roughness of the upper boundary was entirely determined by the epitaxial-growth conditions and did not exceed 500 Å in structures with a layer thickness of about 2 µm.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 12, 2000, pp. 1438–1442.
Original Russian Text Copyright © 2000 by Moiseev, Sitnikova, Faleev, Yakovlev.
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Moiseev, K.D., Sitnikova, A.A., Faleev, N.N. et al. Type II broken-gap InAs/GaIn0.17As0.22Sb heterostructures with abrupt planar interface. Semiconductors 34, 1381–1385 (2000). https://doi.org/10.1134/1.1331795
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DOI: https://doi.org/10.1134/1.1331795