Abstract
An experimentally observed effect is described in which a section of negative differential resistance appears on the current-voltage characteristic of a tunnel diode exposed to an external microwave signal when the diode bias voltage in the absence of the microwave signal is substantially below the peak value. The measurements were made for signal frequencies in the range 25–140 GHz.
Similar content being viewed by others
References
D. A. Usanov, B. N. Korotin, V. E. Orlov, and A. V. Skripal’, Pis’ma Zh. Tekh. Fiz. 16(8), 50 (1990) [Sov. Tech. Phys. Lett. 16, 303 (1990)].
D. A. Usanov, A. V. Skripal’, B. N. Korotin, and V. E. Orlov, Pis’ma Zh. Tekh. Fiz. 19(7), 81 (1993) [Tech. Phys. Lett. 19, 220 (1993)].
Author information
Authors and Affiliations
Additional information
Pis’ma Zh. Tekh. Fiz. 25, 39–42 (January 26, 1999)
Rights and permissions
About this article
Cite this article
Usanov, D.A., Venig, S.B. & Orlov, V.E. Negative differential resistance of a tunnel diode induced by an external microwave signal. Tech. Phys. Lett. 25, 58–59 (1999). https://doi.org/10.1134/1.1262355
Received:
Issue Date:
DOI: https://doi.org/10.1134/1.1262355