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Long-wavelength emission in InGaAsN/GaAs heterostructures with quantum wells

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Abstract

The properties of InGaAsN/GaAs heterostructures with quantum wells on GaAs substrates were studied. The GaAsN layers containing InGaAsN quantum wells with a high (exceeding 1%) nitrogen concentration were obtained. The long-wavelength emission in the InGaAsN quantum wells is obtained in the wavelength range up to 1.32 μm at room temperature. The effect of the InGaAsN quantum parameters on the optical properties of heterostructures is studied.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg, 194021, Russia

    B. V. Volovik, A. R. Kovsh, N. N. Ledentsov & V. M. Ustinov

  2. Heinrich Hertz-Institut für Nachrichtentechnik Berlin GmbH, Einsteinufer 37, 10587, Berlin, Germany

    W. Passenberg & H. Kuenzel

Authors
  1. B. V. Volovik
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  2. A. R. Kovsh
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  3. W. Passenberg
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  4. H. Kuenzel
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  5. N. N. Ledentsov
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  6. V. M. Ustinov
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 26, No. 10, 2000, pp. 88–94.

Original Russian Text Copyright © 2000 by Volovik, Kovsh, Passenberg, Kuenzel, Ledentsov, Ustinov.

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Volovik, B.V., Kovsh, A.R., Passenberg, W. et al. Long-wavelength emission in InGaAsN/GaAs heterostructures with quantum wells. Tech. Phys. Lett. 26, 443–445 (2000). https://doi.org/10.1134/1.1262873

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  • DOI: https://doi.org/10.1134/1.1262873

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