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Optimization of III/V binary growth with RHEED in MOMBE

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Abstract

 In this paper we report on the optimization of homoepitaxial InAs and InP growth in MOMBE (metalorganic molecular beam epitaxy). A correlation is made between good optical quality material and the observation of RHEED (reflection high energy electron diffraction) intensity oscillations. It will be shown, that in situ RHEED oscillations can be used to determine a growth parameter window in MOMBE.

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Authors and Affiliations

  1. Institute of Thin Film and Ion Technology, Research Center Jülich, D-52425 Jülich, Germany , , , , , , DE

    C. Ungermanns, M. v. d. Ahe, R. Carius, A. Förster, M. Hollfelder, H. Hardtdegen, M. Matt, K. Nicoll, R. Schmidt, B. Setzer & H. Lüth

Authors
  1. C. Ungermanns
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  2. M. v. d. Ahe
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  3. R. Carius
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  4. A. Förster
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  5. M. Hollfelder
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  6. H. Hardtdegen
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  7. M. Matt
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  8. K. Nicoll
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  9. R. Schmidt
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  10. B. Setzer
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  11. H. Lüth
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Additional information

Received: 13 August 1996/Accepted: 4 December 1996

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Ungermanns, C., v. d. Ahe, M., Carius, R. et al. Optimization of III/V binary growth with RHEED in MOMBE. Fresenius J Anal Chem 358, 101–104 (1997). https://doi.org/10.1007/s002160050355

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  • DOI: https://doi.org/10.1007/s002160050355

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