Abstract
Thin antimony films have been epitaxially deposited at 350K onto cleavage surfaces of mica at different residual gas pressures between 10−5 and 10−9 torr, and their resistivity ∂ measured as a function of film thicknessd≦500Å at temperaturesT=110K andT=300K. The ∂(d) characteristics of films deposited at residual gas pressures of about 10−6 torr with condensation rates of about 1Å/s showed generally decreasing slopes as film thicknesses increased, but irregularities in detail. The ∂(d) characteristics of films deposited at 10−8 torr with the same condensation rate decreasing with increasingd, too, show no such irregularities but very small regular variations of ∂(d) with constant oscillation length Δd between the maxima, and decreasing amplitudes with increasingd. These variations are better recognizable in a modified ∂(d) graph. We tend to interprete these variations by the quantum size effect as we found oscillation lengths and amplitudes compatibel with theory.
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Hammer, H., Hartweck, W., Stark, D. et al. The quantum size effect in thin antimony films. Appl. Phys. 11, 41–45 (1976). https://doi.org/10.1007/BF00895014
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DOI: https://doi.org/10.1007/BF00895014