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Determination of localized level energies by a statistics of the fermi-level

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Abstract

For a very large number of samples of a semiconducting material, which is not intentionally doped, the Fermi-level coincides approximately with the respective energy levels of the accidential impurities and defects. Based on this fact, the energies of localized levels were determined from a statistic of the Fermi-level in CdSe platelets. These energies agree very well with most of the values obtained with different methods by other authors.

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Authors and Affiliations

  1. Institut für angewandte Physik, Universität, D-7500, Karlsruhe, Fed. Rep. Germany

    P. Belche, H. J. Hoffmann & F. Stöckmann

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  1. P. Belche
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  2. H. J. Hoffmann
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  3. F. Stöckmann
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Belche, P., Hoffmann, H.J. & Stöckmann, F. Determination of localized level energies by a statistics of the fermi-level. Appl. Phys. 12, 379–381 (1977). https://doi.org/10.1007/BF00886040

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  • DOI: https://doi.org/10.1007/BF00886040

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