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On the density of localized levels in amorphous silicon

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Abstract

The distribution of the localized levelsg(ε) in the forbidden gap of amorphous silicon is calculated from the dependence of the Fermi energy on the doping concentration of phosphorus donors and boron acceptors. The minimum ofg(ε) is verified by this method to be in the order of 1017 to 1018 cm−3eV−1, whereas the maxima ofg(ε), which have been reported in the literature, are not confirmed.

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References

  1. A.Madan, P.G.Le Comber, W.E.Spear: J. non-crystalline Solids20, 239 (1976)

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  1. Institut für angewandte Physik, Universität, D-7500, Karlsruhe, Fed. Rep. Germany

    H. -J. Hoffmann

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  1. H. -J. Hoffmann
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Hoffmann, H.J. On the density of localized levels in amorphous silicon. Appl. Phys. 18, 427–429 (1979). https://doi.org/10.1007/BF00899699

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  • DOI: https://doi.org/10.1007/BF00899699

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