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Range parameters of boron implanted into silicon

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Abstract

The range parameters of boron in silicon have been measured using the10B(n,α)7 Li-nuclear reaction. The results indicate that the distributions can be perfectly modeled using Pearson IV distributions with 4 moments. The range is very well described by theoretical calculations, whereas the higher moments show a strong deviation from theory.

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Ryssel, H., Prinke, G., Haberger, K. et al. Range parameters of boron implanted into silicon. Appl. Phys. 24, 39–43 (1981). https://doi.org/10.1007/BF00900395

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