Abstract
The influence of hydrostatic pressure up to 5×108 Pa on deep levels related to transition metal impurities in silicon is determined by means of an isothermal capacitance method. Under pressure, donor levels of isolated Fe, V, Ti, and Mn shift towards the valence band in contrast to earlier results for deep chalcogen donors. This behavior is contrary to what is expected by considering only effects of hybridization. Quantitative differences between Fe, Ti, V, and, on the other hand, Mn suggest a different microscopic structure of these defects. The Fe-acceptor pairs FeB, FeAl, and FeGa move towards the valence band with a rate comparable to that of the Δ1 conduction band. The thermal capture coefficients of isolated Fe, V, and Ti are found to be pressure independent up to 5×108 Pa.
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On leave from Sony Corp., Research Center, Yokohama, Japan