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Kinetic limitations to surface segregation during MBE growth of III–V compounds: Sn in GaAs

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Abstract

The incorporation of Sn as a dopant in GaAs has been studied in the temperature range of 500°–650° C, over a wide range of Ga and As fluxes, the latter being incident as either As4 or As2 molecules. The results are explained in terms of a surface segregation model in which the behaviour at high growth temperatures (above ∼600 °C) approaches thermal equilibrium, but growth at lower temperatures involves a kinetic limitation to the segregation process.

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Author notes

  1. D. E. Ashenford

    Present address: GEC Hirst Research Centre, Wembley, Middlesex

  2. P. J. Dobson

    Present address: Physics Department, Imperial College, London

Authors and Affiliations

  1. Philips Research Laboratories, RH1 5HA, Redhill, Surrey, England

    J. J. Harris, D. E. Ashenford, C. T. Foxon, P. J. Dobson & B. A. Joyce

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  1. J. J. Harris
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  2. D. E. Ashenford
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  3. C. T. Foxon
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  4. P. J. Dobson
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  5. B. A. Joyce
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Harris, J.J., Ashenford, D.E., Foxon, C.T. et al. Kinetic limitations to surface segregation during MBE growth of III–V compounds: Sn in GaAs. Appl. Phys. A 33, 87–92 (1984). https://doi.org/10.1007/BF00617613

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  • DOI: https://doi.org/10.1007/BF00617613

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