Abstract
Thin layers of GaAs are heavily doped locally by laser induced Se or Zn diffusion. H2Se or diethylzinc gases are used to provide Se or Zn dopant atoms. The surface is locally heated with 3 ns light pulses from a Q-switched frequency doubled Nd-YAG laser. The doping process is described in detail. Doping profiles and sheet carrier concentrations are measured as a function of substrate temperature, laser fluence and processing time. Dopant concentrations of more than 1021 cm−3, with a thickness of the doped layer of less than 20 nm can be achieved.
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