Abstract
Beryllium diffusion during MBE growth of (Al, Ga)As layers, (Al, Ga)As/GaAs heterojunctions and GaAs/AlAs superlattices has been studied by electrochemical C-V and secondary ion mass spectrometry (SIMS) concentration profiling, in conjunction with transmission electron microscopy. Diffusion times were comparatively short since they were limited to part of the growth sequence, so non-equilibrium effects had a significant influence. The results are consistent with an interstitial-substitutional mechanism in which lattice site incorporation becomes more difficult with increasing band gap enthalpy. Incorporation involves a “kick-out” reaction which leads to the observed disordering of the superlattices.
Similar content being viewed by others
References
W.D. Laidig, N. Holonyak, Jr., M.D. Camras, K. Hess, J.J. Coleman, P.D. Dapkus, J. Bardeen: Appl. Phys. Lett.38, 776 (1981)
M.D. Camras, N. Holonyak, Jr., K. Hess, M.J. Ludowise, W.T. Dietze, C.R. Lewis: Appl. Phys. Lett.42, 185 (1983)
Luisa Gonzalez, J.B. Clegg, D. Hilton, J.P. Gowers, C.T. Foxon, B.A. Joyce: Appl. Phys. A41, 237 (1986)
M. Kawabe, N. Shimizu, F. Hasegawa, Y. Nannichi: Appl. Phys. Lett.46, 849 (1985)
K. Inoue, H. Sakaki, J. Yoshino: Appl. Phys. Lett.46, 973 (1985)
M. Heiblum: J. Vac. Sci. Technol. B3, 820 (1985)
Y. Matsumoto: Japan. J. Appl. Phys.22, 829 (1983)
B. Tuck, M.A.H. Kadheim: J. Mater. Sci.7, 581 (1972)
P. Enquist, G.W. Wicks, L.F. Eastman, C. Hitzman: J. Appl. Phys.58, 4130 (1985)
Y.C. Pao, T. Hierl, T. Cooper: J. Appl. Phys.60, 201 (1986)
U. Gösele, F. Morehead: J. Appl. Phys.52, 4617 (1981)
R.L.S. Devine: Ph. D. Thesis, University of Glasgow (1985)
J.W. Lee, W.D. Laidig: J. Elect. Mat.13, 147 (1984)
J.A. Van Vechten: J. Vac. Sci. Technol. B2, 569 (1984)
S. Yamahata, S. Adachi, T. Ishibashi: J. Appl. Phys.60, 2814 (1986)
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Devine, R.L.S., Foxon, C.T., Joyce, B.A. et al. Beryllium diffusion across GaAs/(Al, Ga)As heterojunctions and GaAs/AlAs superlattices during MBE growth. Appl. Phys. A 44, 195–200 (1987). https://doi.org/10.1007/BF00626423
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF00626423