Abstract
The low-temperature fabrication of silicon nitride films by ArF excimer laser irradiation has been studied. Two fabrication methods are presented. One is photoenhanced direct nitridation of a silicon surface with NH3 for very thin gate insulators, and the other is photo-enhanced deposition of silicon nitride films with Si2H6 and NH3 gases for stable passivation films. The ArF excimer laser irradiation dissociates the NH3 gas producing NH and NH2 radicals which proved effective in instigating the nitridation reaction. The quality of both films has been much improved and the growth temperature has been lowered by using laser irradiation. These photo-enhanced processes seem to be promising ULSI techniques because they do not depend on high temperatures and are free from possible reactor contamination.
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