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Photoacoustic monitoring of damage in ion implanted and annealed si layers

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Abstract

The photoacoustic technique has been used to characterize ion implanted Si layers, as a function of the implantation conditions of ion dose and energy and of thermal annealing conditions, through the determination of the material thermal conductivity and optical absorption coefficient. It was found that the technique can discriminate between amorphous material obtained under different implantation conditions. Regarding the annealed samples, different results have been obtained for amorphous as-implanted, fine grain polycrystalline, highly defective single crystalline and defect-free single crystalline materials.

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References

  1. K.S. Jones, S. Prussin, E.R. Weber: Appl. Phys. A45, 1 (1986)

    Google Scholar 

  2. W.L. Smith, A. Rosencwaig, D.L. Willenborg: Appl. Phys. Lett.47, 584 (1985)

    Google Scholar 

  3. S. Wurm, P. Alpern, D. Savignac, R. Kakoschke: Appl. Phys. A47, 147 (1988)

    Google Scholar 

  4. H.C. Webber, A.G. Cullis, N.G. Chew: Appl. Phys. Lett.43, 669 (1983)

    Google Scholar 

  5. S.T. Moss:Handbook of Semiconductors (North-Holland, Amsterdam 1980) Vol. 3, p. 771

    Google Scholar 

  6. T. Kitamori, M. Fujii, T. Sawada, Y. Goshi: J. Appl. Phys.58, 1546 (1985)

    Google Scholar 

  7. O. Pessoa, C.L. Cesar, N.A. Patel, H. Vargas, C. Ghizoni, L.C.M. Miranda: J. Appl. Phys.59, 1316 (1986)

    Google Scholar 

  8. J. Opsal, A. Rosencwaig: J. Appl. Phys.53, 4240 (1982)

    Google Scholar 

  9. T. Papa, F. Scudieri: Opt. Commun.41, 431 (1982)

    Google Scholar 

  10. A. Rosencwaig, A. Gersho: J. Appl. Phys.47, 64 (1976)

    Google Scholar 

  11. U. Zammit, M. Marinelli, F. Scudieri, S. Martellucci: Appl. Phys. Lett.50, 830 (1987)

    Google Scholar 

  12. R.C. Weast:Handbook of Chemistry and Physics (CRC, Boca Raton 1984–1985) p. E-13

    Google Scholar 

  13. J.R. Meyer, F. Bartoli, M.R. Kruer: J. de Phys. C4,41, 31 (1980)

    Google Scholar 

  14. L. Reimer:Transmission Electron Microscopy. Springer Ser. Opt. Sci. Vol.36 (Springer, Berlin, Heidelberg 1984) p. 16

    Google Scholar 

Download references

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Authors and Affiliations

  1. Dipartimento Ingnegneria Meccanica, II Université di Roma “Tor Vergata”, Via E. Carnevale, I-00173, Rome, Italy

    L. Luciani, U. Zammit, M. Marinelli, R. Pizzoferrato, F. Scudieri & S. Martellucci

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  1. L. Luciani
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  2. U. Zammit
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  3. M. Marinelli
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  4. R. Pizzoferrato
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  5. F. Scudieri
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  6. S. Martellucci
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Luciani, L., Zammit, U., Marinelli, M. et al. Photoacoustic monitoring of damage in ion implanted and annealed si layers. Appl. Phys. A 49, 205–209 (1989). https://doi.org/10.1007/BF00616300

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  • DOI: https://doi.org/10.1007/BF00616300

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