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Femtosecond laser-induced melting of GaAs probed by optical second-harmonic generation

  • Surface And Multilayers
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Abstract

Primary steps of melting (disordering) of GaAs surface layers after femtosecond pulse excitation have been measured through second-harmonic generation in reflection. A numerical fit of the experimental data yield a characteristic time delay between excitation and lattice melting of about 75 fs.

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Authors and Affiliations

  1. Physics Department, Friedrich Schiller University Jena, DDR-6900, Jena, Germany

    T. Schröder & W. Rudolph

  2. R. V. Khokhlov Nonlinear Optics Laboratory, Moscow State University, SU-119899, Moscow, USSR

    S. V. Govorkov & I. L. Shumay

Authors
  1. T. Schröder
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  2. W. Rudolph
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  3. S. V. Govorkov
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  4. I. L. Shumay
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Schröder, T., Rudolph, W., Govorkov, S.V. et al. Femtosecond laser-induced melting of GaAs probed by optical second-harmonic generation. Appl. Phys. A 51, 49–51 (1990). https://doi.org/10.1007/BF00324464

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  • DOI: https://doi.org/10.1007/BF00324464

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