Abstract
Small-area high-barrier Schottky diodes have a very high dynamic resistance. Consequently, special care is needed when measuring the current-voltage characteristic of such diodes. The reported observation of carrier recombination in the depletion layer of high-barrier IrSi/Si Schottky diodes at room temperature is shown to be due to instrumental loading of the diodes. Careful measurements show that carrier recombination is observed only below 200 K and is dependent on the dimension of the diode.
Similar content being viewed by others
References
A.Y.C. Yu, E.H. Snow: J. Appl. Phys. 39, 3008 (1968)
A.S. Grove, D.J. Fitzgerald: Solid-State Electron. 9, 783 (1966)
I. Ohdomari, K.N. Tu, F.M. d'Heurle, T.S. Kuan, S. Peterson: Appl. Phys. Lett. 33, 1028 (1978)
I. Ohdomari, T.S. Kuan, K.N. Tu: J. Appl. Phys. 50, 7020 (1979)
S.M. Sze: Physics of Semiconductor Devices (Wiley, New York 1981) p. 245
M. Wittmer: Phys. Rev. B 42, 5249 (1990)
W. Shockley, W.T. Read: Phys. Rev. 87, 835 (1952)
M.P. Lepselter, S.M. Sze: Bell System Tech. J. 47, 195 (1968)