Abstract
Epitaxial lateral overgrowth (ELO) on thermally oxidized and patterned (111) Si is effected by liquid phase epitaxy (LPE). It produces Si layers spreading out on the amorphous SiO2 which are either perfectly grown defect-free or, coexisting, defective layers containing dislocations. High voltage electron microscopy of the defective layers reveals regular arrangements of the dislocations which result from glide and multiplication processes governed by the elastic interactions between the dislocations. The nucleation of the first dislocations during the ELO process is attributed to a slight warping of the substrates. A corresponding bending of the epitaxial layer induces mechanical stress, which may exceed the critical value at the oxide edges of the seeding windows where the first dislocations nucleate. The characteristics of the dislocation arrangements and lattice imaging results support this model. Suggestions are made for ways to reduce stress and, thus, avoid dislocation formation.
Similar content being viewed by others
References
R.P. Zingg, J.A. Friedrich, G.W. Neudeck, B. Höfflinger: IEEE Trans. ED-37, 1452 (1990)
M. Sasaki, T. Katoh, H. Onoda, N. Hirashita: Appl. Phys. Lett. 49, 397 (1986)
E. Bauser, D. Käss, M. Warth, H.P. Strunk: Mater. Res. Soc. Symp. Proc. 54, 267 (1986)
R. Bergmann, E. Bauser, J.H. Werner: Appl. Phys. Lett. 57, 351 (1990)
R. Bergmann: J. Cryst. Growth 110, 823 (1991)
F. Banhart, F. Phillipp, R. Bergmann, E. Czech, M. Konuma, E. Bauser: In Proc. of the 12th Int. Congress for Electron Microscopy, Vol. 4, ed. by L.D. Peachy, D.B. Williams (San Francisco Press, San Francisco 1990) p. 566
J.T. McGinn, L. Jastrzebski, J.F. Corboy: J. Electrochem. Soc. 131, 398 (1984)
R. Bergmann, F. Banhart, R. Köhler, B. Jenichen: To be published
E. Bauser, M. Frik, K.S. Löchner, L. Schmid, R. Ulrich: J. Cryst. Growth 27, 148 (1974)
H.R. Pettit, G.R. Booker: In Proc. 25th Anniversary Meeting of EMAG. Inst. Phys. Conf. Ser. 10, ed. by W.C. Nixon (London, Bristol 1971) p. 290
C.H. Lane: IEEE Trans. ED-15, 998 (1968)
R.J. Jaccodine, W.A. Schlegel: J. Appl. Phys. 37, 2429 (1966)
I.A. Blech, E.S. Meieran: J. Appl. Phys. 38, 2913 (1967)
S.C.H. Lin, I. Pugacz-Muraskiewicz: J. Appl. Phys. 43, 119 (1972)
S.D. Brotherton, T.G. Read, D.W. Lamb, A.F.W. Willoughby: Solid State Electron. 16, 1367 (1973)
G. Franz, W. Hartmann: Appl. Phys. 23, 107 (1980)
E.P. EerNisse: Appl. Phys. Lett. 35, 8 (1979)
E. Kobeda, E.A. Irene: J. Vac. Sci. Technol. B 6, 574 (1988)
A. Bohg, A.K. Gaind: Appl. Phys. Lett. 33, 895 (1978)
G. Franz, B.O. Kolbesen, R. Lemme, H. Strunk: In Semiconductor Silicon 1981, ed. by H. Huff, R.J. Kriegler, Y. Takeishi (The Electrochem. Soc. Pennington, NJ 1981) p. 821
L. Jastrzebski, R. Soydan, N. Armour, S. Vecrumba, W.N. Henry: J. Electrochem. Soc. 134, 209 (1987)
J. Vanhellemont, S. Amelinckx, C. Claeys: J. Appl. Phys. 61, 2170 (1987)
J. Vanhellemont, C. Claeys: J. Appl. Phys. 63, 5703 (1988)
C.I. Drowley, G.A. Reid, R. Hull: Appl. Phys. Lett. 52, 546 (1988)
H. Kitajima, Y. Fujimoto, N. Kasai, A. Ishitani, N. Endo: J. Cryst. Growth 98, 264 (1989)
E.P. EerNisse: Appl. Phys. Lett. 30, 290 (1977)
D. Thebault, L. Jastrzebski: RCA Rev. 41, 592 (1980)
F. Banhart, F. Phillipp: To be published
F.C. Frank, W.T. Read: Phys. Rev. 79, 722 (1950)
I. Kovács, L. Zsoldos: Dislocations and Plastic Deformation (Pergamon, Oxford 1973)
P. Pandya, A. Martinez: Appl. Phys. Lett. 52, 901 (1988)
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Banhart, F., Bergmann, R., Phillipp, F. et al. Dislocation generation in silicon grown laterally over SiO2 by liquid phase epitaxy. Appl. Phys. A 53, 317–323 (1991). https://doi.org/10.1007/BF00357194
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF00357194