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Laser-reactive ablation deposition of silicon-nitride films

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Abstract

Silicon-nitride films were deposited on silicon waters by XeCl (308 nm) excimer-laser ablation of silicon in low-pressure (0.05–5 mbar) ammonia atmospheres. Series of 10 000 pulses at the repetition rate of 8 Hz were directed to the target surface. The fluence was set at about 5 J/cm2. Pulse duration was about 30 ns. The deposited films were characterized by different techniques (X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy, Rutherford backscattering spectrometry, scanning electron microscopy, profilometry). Silicon-nitride films with thickness close to 1 μm were obtained under specific experimental conditions.

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Authors and Affiliations

  1. Department of Physics, University of Lecce, I-73100, Lecce, Italy

    M. L. De Giorgi, G. Leggieri, A. Luches, M. Martino & A. Perrone

  2. Department of Materials Science, University of Ancona, I-Ancona, Italy

    G. Majni & P. Mengucci

  3. Institute of Physics, Czech Academy of Sciences, 16200, Prague 6, Czech Republic

    J. Zemek

  4. Institute of Atomic Physics, Magurele, RO-76900, Bucharest, Romania

    I. N. Mihailescu

Authors
  1. M. L. De Giorgi
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  2. G. Leggieri
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  3. A. Luches
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  4. M. Martino
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  5. A. Perrone
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  6. G. Majni
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  7. P. Mengucci
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  8. J. Zemek
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  9. I. N. Mihailescu
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De Giorgi, M.L., Leggieri, G., Luches, A. et al. Laser-reactive ablation deposition of silicon-nitride films. Appl. Phys. A 60, 275–283 (1995). https://doi.org/10.1007/BF01538403

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  • DOI: https://doi.org/10.1007/BF01538403

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