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Raman spectroscopy of strained GeSi alloys deposited on Ge substrates

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Abstract

The Raman scattering method has been successfully used to investigate the properties of GeSi alloys deposited on Ge substrates in this paper. The effect of Si composition and strain in the GeSi alloy on the Raman shifts of Ge-Ge, Ge-Si and Si-Si phonon modes is studied. The relationship between them have been derived by the assumption that the Raman shifts is nearly linear with Si composition and strain in the GeSi alloys. The experimental data show reasonable agreement with the fits.

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References

  1. F. Meyer, M. Zafrany, M. Eizenberg, R. Beserman, C. Schwebel, C. Pellet: J. Appl. Phys.70, 4268 (1991)

    Google Scholar 

  2. R. Zhang, Y. Zhang, S. Gu, L. Hu: Mater. Res. Soc. Symp. Proc.298, 145 (1993)

    Google Scholar 

  3. Z. Sui, I.P. Herman, J. Bevk: Appl. Phys. Lett.58, 2352 (1991)

    Google Scholar 

  4. D.J. Lockwood, J.M. Baribrau: Phys. Rev. B45, 8565 (1992)

    Google Scholar 

  5. C. Lee, K.L. Wang: Appl. Phys. Lett.64, 1256 (1994)

    Google Scholar 

  6. R. People: Phys. Rev. B34, 2508 (1986)

    Google Scholar 

  7. P.M. Mooney, F.H. Dacol, J.C. Tsang, J.O. Chu: Appl. Phys. Lett.62, 2069 (1993)

    Google Scholar 

  8. J.C. Tsang, P.M. Mooney, F. Dacol, J.D. Chu: J. Appl. Phys.75, 8098 (1994)

    Google Scholar 

  9. A. Pinczuk, E. Burstein: InLight Scattering in Solids I, ed. by M. Cardona, Topics Appl. Phys., Vol. 8 (Springer, Berlin, Heidelberg 1975) p. 23

    Google Scholar 

  10. Y. Zheng, R. Zhang, R. Jiang, L. Hu, P. Zhong, S. Mo, S. Yu, Q. Li, D. Feng: InProc. 20th ICPS, ed. by E. M. Anastassakis, J.D. Joannopulos (World Scientific, Singapore 1990) p. 869

    Google Scholar 

  11. P. Zhong, Y. Zheng, R. Zhang, L. Hu: Appl. Phys. Lett.61, 79 (1992)

    Google Scholar 

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Authors and Affiliations

  1. Department of Physics, Nanjing University, 210093, Nanjing, People's Republic of China

    S. Gu, L. Qin, R. Zhang, X. Zhu & Y. Zheng

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  1. S. Gu
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  2. L. Qin
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  3. R. Zhang
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  4. X. Zhu
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  5. Y. Zheng
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Gu, S., Qin, L., Zhang, R. et al. Raman spectroscopy of strained GeSi alloys deposited on Ge substrates. Appl. Phys. A 62, 387–390 (1996). https://doi.org/10.1007/BF01594238

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  • DOI: https://doi.org/10.1007/BF01594238

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