Skip to main content
SpringerLink
Log in

Gate dielectrics prepared by double nitridation in NO and N2O

  • Regular paper
  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract.

Oxynitrides prepared by double nitridation in nitric oxide (NO) and nitrous oxide (N2O) are compared to the one with a single NO nitridation. Based on various hot-carrier stresses, harder oxide/Si interface, less charge trapping and generation of electron/hole traps in oxide, and larger charge-to-breakdown are observed for the doubly-nitrided gate dielectrics than the singly-nitrided one. By analyzing the nitrogen profiles in these oxynitrides, it is revealed that the involved mechanisms lie in the smaller distance of peak nitrogen concentration from the oxide/Si interface and the higher nitrogen content near the oxide/Si interface in the doubly-nitrided oxynitrides.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

Author information

Authors and Affiliations

  1. Department of Electronic Science & Technology, Huazhong University of Science and Technology, Wuhan, Hubei Province 430074, P.R. China (Fax: +86-27/8754-5438, E-mail: jinpinxu@public.wh.hb.cn), , , , , , CN

    J.P. Xu

  2. Department of Electrical and Electronic Engineering, the University of Hong Kong, Pokfulam Road, Hong Kong, , , , , , HK

    P.T. Lai & Y.C. Cheng

Authors
  1. J.P. Xu
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. P.T. Lai
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Y.C. Cheng
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Received: 7 June 1999 / Accepted: 29 July 1999 / Published online: 3 November 1999

Rights and permissions

Reprints and permissions

About this article

Cite this article

Xu, J., Lai, P. & Cheng, Y. Gate dielectrics prepared by double nitridation in NO and N2O . Appl Phys A 70, 101–105 (2000). https://doi.org/10.1007/s003390050020

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/s003390050020

Search

Navigation