Abstract.
The Raman spectrum of GaN straight nanowires deposited on a LaAlO3 crystal substrate was studied. The E2 (high) phonon frequency at 560 cm-1 shows a 9 cm-1 shift compared with the calculated value. The low-energy shift and band broadening of the Raman modes result from the nanosize effect. The unique property of the low intensity ratio of IE2/IA1(LO) on the Raman spectrum from the GaN straight nanowires was observed.
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Received: 5 June 2000 / Accepted: 7 June 2000 / Published online: 2 August 2000
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Li, J., Chen, X., Cao, Y. et al. Raman-scattering spectrum of GaN straight nanowires . Appl Phys A 71, 345–346 (2000). https://doi.org/10.1007/s003390000602
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DOI: https://doi.org/10.1007/s003390000602