and a shortening of the Si-O bond occur. and a shortening of the Si-O bond occur. and a shortening of the Si-O bond occur. and a shortening of the Si-O bond occur. and a shortening of the Si-O bond occur. and a shortening of the Si-O bond occur. " /> " /> " /> " /> " /> " /> As a result of interelectronic repulsion and the considerable electronegativity of the Cl substituent, distortions of the tetrahedral Si environment As a result of interelectronic repulsion and the considerable electronegativity of the Cl substituent, distortions of the tetrahedral Si environment As a result of interelectronic repulsion and the considerable electronegativity of the Cl substituent, distortions of the tetrahedral Si environment As a result of interelectronic repulsion and the considerable electronegativity of the Cl substituent, distortions of the tetrahedral Si environment As a result of interelectronic repulsion and the considerable electronegativity of the Cl substituent, distortions of the tetrahedral Si environment As a result of interelectronic repulsion and the considerable electronegativity of the Cl substituent, distortions of the tetrahedral Si environment