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Sn In silicon carbide: A mossbauer and channeling study

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Conclusion

Implantation of Sn at ∼550°C into SiC and post-annealing at 1120°C has been demonstrated to lead to a predominant population of the substitutional Si sites. The electronic structure of the Sn atoms in substitutional Si sites has been shown to be strongly influenced by the partial ionicity of the host material.

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References

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Authors and Affiliations

  1. Institute of Physics, University of Aarhus, DK-8000, Aarhus C, Denmark

    J. W. Petersen, J. U. Andersen, S. Damgaard, I. Stensgaard & G. Weyer

  2. Fudan University, Shanghai, Peoples Republic of China

    F. O. Lu & J. Y. Tang

  3. Shanghai University of Science and Technology, Shanghai, Peoples Republic of China

    Z. H. Zhang

Authors
  1. J. W. Petersen
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  2. J. U. Andersen
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  3. S. Damgaard
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  4. F. O. Lu
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  5. I. Stensgaard
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  6. J. Y. Tang
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  7. G. Weyer
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  8. Z. H. Zhang
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Petersen, J.W., Andersen, J.U., Damgaard, S. et al. Sn In silicon carbide: A mossbauer and channeling study. Hyperfine Interact 10, 989–993 (1981). https://doi.org/10.1007/BF01022042

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  • DOI: https://doi.org/10.1007/BF01022042

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