Abstract
Implantations of F in crystalline Ge has been examined by the DPAD method. Two unique fluorine EFG sites are found. The results show a strong resemblance to similar data obtained earlier for Si, e.g., in either host an axial symmetric EFG oriented along the <111> crystal direction is observed, also the temperature dependences of site populations follow similar trends. A thorough comparison of the Ge and Si data is given.
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Nielsen, K.B., Lauritsen, T., Weyer, G. et al. Quadrupole interactions of fluorine at implantation sites in germanium and silicon. Hyperfine Interact 15, 491–494 (1983). https://doi.org/10.1007/BF02159798
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DOI: https://doi.org/10.1007/BF02159798