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Muon decay channeling in silicon

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Abstract

The angular distribution of positrons from muon decay in an oriented [111] Si wafer shows a symmetric pattern of six lines of minimum counting rate radiating from a central minimum. The pattern results from positron blocking by the (110) planes and [111) axis. The measurement technique and the dependence of the features on positron energy, muon implanation depth and sample temperature are discussed.

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Patterson, B.D., Bosshard, A., Straumann, U. et al. Muon decay channeling in silicon. Hyperfine Interact 19, 965–970 (1984). https://doi.org/10.1007/BF02066144

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