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Effect of interstitial impurities on positronium formed in voids of vanadium

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Abstract

Angular correlation of two-photon annihilation radiation (ACAR) measurements have been performed to study the effect of interstitial impurities (O, C and D) on positronium (Ps) formation in irradiation-induced voids of vanadium. It has been observed that Ps formation is sensitively affected by doping with the interstitial impurities, irradiation dose, irradiation temperature, and also by post-irradiation annealing. The Ps component intensity is found to be related to segregation of the interstitial impurities and provides a new experimental method to study void surfaces.

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Authors and Affiliations

  1. Institute for Materials Research, Tohoku University, 980, Sendai, Japan

    M. Hasegawa, Y. Saitoh & S. Yamaguchi

  2. Metals Research Institute, Faculty of Engineering, Hokkaido University, 060, Sapporo, Japan

    H. Takahashi & S. Ohnuki

Authors
  1. M. Hasegawa
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  2. Y. Saitoh
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  3. S. Yamaguchi
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  4. H. Takahashi
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  5. S. Ohnuki
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Hasegawa, M., Saitoh, Y., Yamaguchi, S. et al. Effect of interstitial impurities on positronium formed in voids of vanadium. Hyperfine Interact 84, 389–396 (1994). https://doi.org/10.1007/BF02060687

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