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Electric field-gradients at gallium in noncubic metals: Role of the impurity valence

  • Hyperfine Fields: Electric Interactions
  • Metals and Alloys
  • Published:
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References

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Authors and Affiliations

  1. Bell Laboratories, 07974, Murray Hill, NJ, USA

    R. S. Raghavan (Associate of the Graduate Faculty of Rutgers University)

  2. Rutgers University, 08903, New Brunswick, NJ, USA

    P. Raghavan

Authors
  1. R. S. Raghavan
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  2. P. Raghavan
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Supported in part by the U. S. NSF.

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Raghavan, R.S., Raghavan, P. Electric field-gradients at gallium in noncubic metals: Role of the impurity valence. Hyperfine Interact 9, 317–322 (1981). https://doi.org/10.1007/BF01020939

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  • DOI: https://doi.org/10.1007/BF01020939

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