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High-strength silicon nitride ceramics obtained by grain-boundary crystallization

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Abstract

A monolithic type of toughened silicon nitride ceramics has been developed from Si3N4-Y2O3 systems. However, because of the existence of a second phase, the fracture strength decreases at elevated temperatures. To improve the high-temperature strength of silicon nitride, some additional components were investigated. It was found that the addition of hafnia to the Si3N4-Y2O3-AIN system gave a greater high-temperature strength based on the promotion of grain-boundary phase crystallization: namely, 126 kg mm−2 in 3-point bend strength at 1300 °C for the hot-pressed specimen, and 90 kg mm−2 at 1300 °C for the pressureless sintered specimen. The role of the hafnia in crystallization is not yet clear, and is being characterized by electron microscopy and microanalysis.

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Authors and Affiliations

  1. Yokohama National University, Tokiwadai, Hodogayaku, 240, Yokohama, Japan

    K. Komeya

  2. Toshiba New Materials Engineering Laboratory, Suehirocho, Tsurumiku, 230, Yokohama, Japan

    M. Komatsu & T. Kameda

  3. Toshiba R&D Center, Komukai, Saiwaiku, 210, Kawasaki, Japan

    Y. Goto & A. Tsuge

Authors
  1. K. Komeya
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  2. M. Komatsu
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  3. T. Kameda
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  4. Y. Goto
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  5. A. Tsuge
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Komeya, K., Komatsu, M., Kameda, T. et al. High-strength silicon nitride ceramics obtained by grain-boundary crystallization. J Mater Sci 26, 5513–5516 (1991). https://doi.org/10.1007/BF02403951

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  • DOI: https://doi.org/10.1007/BF02403951

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