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Mechanism of adhesion improvement in ion-beam mixed Cu/SiO2

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Abstract

A thin copper layer (35 nm) deposited on SiO2 has been subjected to ion-beam mixing with 80 keV Ar+ at room temperature, 550 and 650 K. Interfacial properties of irradiated samples were investigated using Rutherford backscattering spectroscopy, grazing-angle X-ray diffraction, X-ray photo-electron spectroscopy and scratch testing. The adhesion of the copper film was improved by a factor of three at a dose of 1.5 × 1016 Ar+ cm−2 by the ion-beam mixing at room temperature, while the high-temperature ion-beam mixing enhanced the adhesion by a factor of five. Ballistic mixing plays a role in the improvement of adhesion for the room-temperature ion mixing, and the creation of Cu2O phase induced by ion-beam mixing contributes to the enhancement of adhesion at high temperature.

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Author notes

  1. K. S. Kim

    Present address: Department of Physics, Mokwon University Daejon, 301-729, Korea

Authors and Affiliations

  1. Department of Physics, Yonsei University, 120-749, Seol, Korea

    K. H. Chae, H. G. Jang, I. S. Choi, S. M. Jung, K. S. Kim & C. N. Whang

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  1. K. H. Chae
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  2. H. G. Jang
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  3. I. S. Choi
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  4. S. M. Jung
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  5. K. S. Kim
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  6. C. N. Whang
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Chae, K.H., Jang, H.G., Choi, I.S. et al. Mechanism of adhesion improvement in ion-beam mixed Cu/SiO2 . Journal of Materials Science 29, 749–753 (1994). https://doi.org/10.1007/BF00445989

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  • DOI: https://doi.org/10.1007/BF00445989

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