Abstract
Deformation of single crystals of gallium arsenide is reported in bend and tension up to 1000° C whilst maintaining stoichiometry in an arsenic atmosphere. Surface defects and impurity segregation are shown to be dislocation sources. The dislocation density is low enough, however, to show large yield drops which are analysed in detail. Strains of 39% are possible. The activation energy for dislocation movement is increased by heat-treatment owing to an increase in point defect population.
Electron microscopy shows that the predominant slip systems are {111} 〈110〉 and the majority of dislocations have b=a/2 〈110〉, the axes lying along 〈110〉 and 〈112〉 directions. Sub-cell formation occurs with sub-boundaries lying along 〈110〉 directions.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
J. R. Patel and A. R. Chaudhuri, J. Appl. Phys. 34 (1963) 2788.
R. L. Bell and W. Bonfield, Phil. Mag. 9 (1964) 9.
A. Steinemann and U. Zimmerli, Solid State Electron 6 (1963) 597.
S. Timoshenko and J. N. Goodier, “Theory of Elasticity” (McGraw-Hill, New York, 1951).
A. A. Bruneau and P. L. Pratt, Phil. Mag. 7 (1962) 1871.
C. S. Barrett, “Structure of Metals” (McGraw-Hill, New York and London, 1952).
J. R. Patel and P. E. Freeland, J. Appl. Phys. 38 (1967) 3087.
P. Haasen and A. Seeger, “Halbleiterprobleme” (Brauschweig-Vieweg, Berlin, 1958) 4 68.
H. Alexander, Z. Metallk. 52 (1961) 344.
A. R. Chaudhuri, J. R. Patel, and L. G. Rubin, J. Appl. Phys. 33 (1962) 2736.
J. R. Patel and A. R. Chaudhuri, ibid 34 (1963) 2788.
J. R., Low Jun, and A. M. Turkalo, Acta Metallurgica 10 (1962) 215.
P. B. Hirsch, A. Howie, R. B. Nicholson, D. W. Pashley, and M. J. Whelan, “Electron Microscopy of Thin Films” (Butterworths, London, 1965).
A. Howie, “Direct Observation of Imperfections in Crystals”, eds J. B. Newkirk and J. H. Wernick (Interscience, New York and London, 1962) p. 283.
J. Hornstra, J. Phys. Chem. Solids 5 (1958) 129.
W. G. Johnson and J. J. Gilman, J. Appl. Phys. 30 (1959) 129.
A. H. Cottrell, “Relationship between Structure and Mechanical Properties of Matter” (N.P.L. Symp., HMSO, 1963) p. 456.
N. P. Sazhin, M. G. Mil'vidskii, V. B. Osvenskii, and A. G. Stolyarov, Soc. Phys. Solid State 8 (1966) 1223.
D. Laister and G. M. Jenkins, Phil. Mag. 23 (1971) 1077.
W. C. Dash, “Properties of Elemental and Compound Semiconductors”, Met. Soc. Conf., Vol. 5, Ed., H. C. Gatos (Interscience, New York and London, 1959).
V. Celli, M. Kabler, T. Nimonija, and R. Thompson, Phys. Rev. 131 (1963) 58.
J. Black and P. Lublin, J. Appl. Phys. 35 (1964) 2467.
M. S. Abrahams and L. Ekstrom, Acta Metallurgica 8 (1960) 654.
A. E. Jenkinson and A. R. Lang, “Direct Observation of Imperfections in Crystals” (Interscience, New York and London, 1962) p. 47.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Laister, D., Jenkins, G.M. Deformation of single crystals of gallium arsenide. J Mater Sci 8, 1218–1232 (1973). https://doi.org/10.1007/BF00549336
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF00549336