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Photoluminescence from polycrystalline GaN on silicon substrates grown by RF plasma enhanced chemical vapor deposition with ZnO buffer layers

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Department of Electronic Science and Engineering, Kyoto University, Kyoto, 606-8501, Japan

    D. C. Park

  2. Department of Electronic Science and Engineering, Kyoto University, Kyoto, 606-8501, Japan

    S. Fujita & S. Fujita

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  1. D. C. Park
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  2. S. Fujita
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  3. S. Fujita
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Park, D.C., Fujita, S. & Fujita, S. Photoluminescence from polycrystalline GaN on silicon substrates grown by RF plasma enhanced chemical vapor deposition with ZnO buffer layers. Journal of Materials Science Letters 19, 631–633 (2000). https://doi.org/10.1023/A:1006738022679

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  • DOI: https://doi.org/10.1023/A:1006738022679

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