Abstract
A Field-Effect Transistor in which the channel is made of Langmuir-Blodgett layers of EDTTTF derivatives is described and studied. The device behaves as a P-channel MOSFET working in the depletion mode. A deep modulation of the film conduction properties and non-linear contact resistance effects have been observed.
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Bourgoin, J.P., Vandevyver, M., Barraud, A. et al. Field-Effect Transistor based on conducting Langmuir-Blodgett films of EDTTTF derivatives. Mol Eng 2, 309–314 (1993). https://doi.org/10.1007/BF00999819
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DOI: https://doi.org/10.1007/BF00999819