Summary
Low-temperature PL decay times, τPL, measured for a series of In x Ga1−x As/GaAs quantum wells (QWs) show an almost linear increase with increasing thickness (4≤L z ≤10 nm,x=0.15) and with increasing In composition (0.05≤x≤0.25,L z =8 nm). τPL also increases linearly with temperature up to 50K, as expected for free excitons and does not exhibit the interface effects seen for GaAs/AlGaAs QWs. Wells with different In compositions exhibit a similar temperature behaviour and there is a weak influence of strain on the decay time.
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References
Yu H., Roberts C. andMurray R.,Appl. Phys. Lett.,66 (1995) 2253.
Martinez-Pastor J., Vinattieri A., Carraresi L., Colocci M., Roussignol Ph. andWeimann G.,Phys. Rev. B,47 (1993) 10456.
Feldmann J., Peter G., Göbel E. O., Dawon P., Moore K., Foxon C. T. andElliot R. J.,Phys. Rev. Lett.,59 (1987) 2337.
Moloney M. H., Hegarty J., Buydens L., Demeester P., Grey R. andWoodhead J.,Appl. Phys. Lett.,62 (1993) 3327.
Toyoshima H., Niwa T., Yamazaki J. andOkamoto A.,Appl. Phys. Lett.,63 (1993) 821;J. Appl. Phys.,75 (1994) 3908.
Nagle J., Landesman J. P., Larvine M., Mottet C. andBois P.,J. Cryst. Growth,127 (1993) 550.
Takahashi Y., Owa S., Kano S. S. Muraki K., Fukatsu S., Shiraki Y. andIto R.,Appl. Phys. Lett.,60 (1992) 213.
Yu H., Mookhejee P., Murray R. andYoshinaga A.,J. Appl. Phys.,77 (1995) 1217 (see alsoYu H. andMurray R., this issue, p. 1791).
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Murray, R., Yu, H. Influence of indium segregation on exciton recombination dynamics in InGaAs/GaAs quantum wells. Il Nuovo Cimento D 17, 1625–1628 (1995). https://doi.org/10.1007/BF02457254
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DOI: https://doi.org/10.1007/BF02457254