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Low-dose SIMOX wafers for LSIs fabricated with internal-thermal-oxidation (ITOX) process: electrical characterization

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Abstract

Electrical performance of separation by implanted oxygen (SIMOX) wafers manufactured by internal-thermal-oxidation (ITOX) process was evaluated. Breakdown behaviour of the buried oxide (BOX) layer was confirmed quantitatively to be dominated by Si islands therein, which were found to be reduced in size or eliminated by the ITOX process. By optimizing the oxygen dose and ITOX amount, a BOX breakdown field of about 8 MV/cm, comparable to those of thermally-grown oxide, was attained. The gate oxide integrity on an ITOX-SIMOX wafer was found to be superior to that of bulk Si wafers, indicating the wafer surface was improved by the high temperature annealing.

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References

  1. See for example; W. P. Maszara, R. Dockerty, C. F. H. Gondran and P. K. Vasudev, in Proceedings of the Eighth International Symposium on Silicon-on-Insulator Technology and Devices, Paris, August 1997, edited by S. Cristoloveanu (The Electrochemcal Society, Inc., New Jersey, 1997) p. 15.

    Google Scholar 

  2. K. Izumi, M. Doken and H. Ariyoshi, Electron. Lett. 14 (1978) 593.

    Google Scholar 

  3. S. Nakashima and K. Izumi, ibid. 26 (1991) 1647.

    Google Scholar 

  4. Idem., J. Mater. Res. 8 (1993) 523.

    Google Scholar 

  5. S. Nakashima, T. Katayama, Y. Miyamura, A. Matsuzaki, M. Taoka, D. Ebi, M. Imai, K. Izumi and N. Owada, J. Electrochem. Soc. 143 (1996) 244.

    Google Scholar 

  6. T. Nakajima, T. Yano, I. Hamaguchi, M. Tachimori and T. Fujita, in 1994 IEEE International SOI Conference Proceedings, Massachusetts, October 1994 (Institute of Electrical and Electronics Engineers, Inc., New Jersey, 1994) p. 81.

  7. T. Katayama, S. Nakashima, Y. Miyamura, M. Kataoka, M. Denbata, M. Imai, K. Izumi and N. Ohwada, ibid 1994 ibid IEEE International SOI Conference Proceedings, Massachusetts, October 1994 (Institute of Electrical and Electronics Engineers, Inc., New Jersey, 1994)ibid. p. 75.

  8. S. Nakashima, M. Harada and T. Tsuchiya, in 1993 IEEE International SOI Conference Proceedings, California, October 1993 (Institute of Electrical and Electronics Engineers, Inc., New Jersey, 1993) p. 14.

    Google Scholar 

  9. S. Nakashima, Private communication.

  10. K. Kawamura, T. Yano, I. Hamaguchi, S. Takayama, Y. Nagatake and A. Matsumura, in Extended Abstract of 1998 International Conference on Solid State Devices and Materials, Hiroshima, September 1998; Jpn. J. Appl. Phys. 38 (1999) 2477.

    Google Scholar 

  11. K. Kawamura, T. Nakajima, I. Hamaguchi, T. Yano, Y. Nagatake and M. Tachimori, in 1995 IEEE International SOI Conference Proceedings, Arizona, October 1995 (Institute of Electrical and Electronics Engineers, Inc., New Jersey, 1995) p. 156.

    Google Scholar 

  12. K. awamura, A. Matsumura, T. Yano, I. Hamaguchi, Y. Nagatake, S. Takayama, M. Tachimori and K. Kurumada, in 1997 IEEE International SOI Conference Proceedings, California, October 1997 (Institute of Electrical and Electronics Engineers, Inc., New Jersey, 1997) p. 122.

    Google Scholar 

  13. K. Kawamura, H. Deai, Y. Morikawa, H. Sakamoto, T. Yano, I. Hamaguchi, S. Takayama, Y. Nagatake, A. Matsumura, M. Tachimori and S. Nakashima, in 1996 IEEE International SOI Conference Proceedings, Florida, September 1996 (Institute of Electrical and Electronics Engineers, Inc., New Jersey, 1996) p. 162.

    Google Scholar 

  14. H. Deai, T. Iwasaki, Y. Ikematsu, K. Kawakami, H. Harada and A. Matsumura, Jpn. J. Appl. Phys. 35 (1996) L1476.

    Google Scholar 

  15. M. Ino, H. Sawada, K. Nishimura, M. Urano, H. Suto, S. Date, T. I Shihara, T. Takeda, Y. Kado, H. Inokawa, T. Tshchiya, Y. Sakakibara, Y. Arita, K. Izumi, K. Takeya and T. Sakai, in 1996 IEEE International Solid-State Circuits Conference Digest of Technical Papers, San Francisco, February 1996, edited by J. H. Wuorinen (Institute of Electrical and Electronics Engineers, Inc., New Jersey, 1996) p. 86.

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Authors and Affiliations

  1. Advanced Technology Research Labs., Nippon Steel Corporation, 3434 Shimata, Hikari, Yamaguchi, 743-0063, Japan

    A. Matsumura, K. Kawamura, I. Hamaguchi, S. Takayama, T. Yano & Y. Nagatake

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  1. A. Matsumura
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  2. K. Kawamura
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  3. I. Hamaguchi
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  4. S. Takayama
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  5. T. Yano
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  6. Y. Nagatake
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Matsumura, A., Kawamura, K., Hamaguchi, I. et al. Low-dose SIMOX wafers for LSIs fabricated with internal-thermal-oxidation (ITOX) process: electrical characterization. Journal of Materials Science: Materials in Electronics 10, 365–371 (1999). https://doi.org/10.1023/A:1008997423606

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