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The effect of oxygen in WN x films on thermal stability of WN x /GaAs interfaces

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Abstract

The investigation of thermal stability of WN x /GaAs Schottky contacts prepared by selective ion implantation of nitrogen into tungsten film has been demonstrated. Auger electron spectroscopy was used for characterization of thermal stability of the interfaces after rapid thermal annealing at 950 ‡C for 10s. Significant oxygen influence on migration of Ga atoms from the substrate into metallization systems was observed.

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Authors and Affiliations

  1. Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 842 39, Bratislava, CSFR

    D. Gregušová, T. Lalinský & ž. Mozolová

  2. Department of Microelectronics, Slovak Technical University, Ilkovičova 3, 812 19, Bratislava, CSFR

    J. Breza & P. Vogrinčič

Authors
  1. D. Gregušová
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  2. T. Lalinský
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  3. ž. Mozolová
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  4. J. Breza
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  5. P. Vogrinčič
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Gregušová, D., Lalinský, T., Mozolová, ž. et al. The effect of oxygen in WN x films on thermal stability of WN x /GaAs interfaces. J Mater Sci: Mater Electron 4, 197–199 (1993). https://doi.org/10.1007/BF00224740

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  • DOI: https://doi.org/10.1007/BF00224740

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