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Optical and transport properties of δ-doped pseudomorphic AlGaAs/InGaAs/GaAs structures

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Abstract

We investigate the effects of spacer layer thickness on the optical and transport properties of the n-typeδ-doped pseudomorphic Al0.30Ga0.70As/In0.15Ga0.85As / GaAs structures. Aδ-doped AlGaAs/InGaAs/GaAs structure with a 6nm spacer layer yields a sheet carrier concentration of 1.5×1012 cm−2 at 77K with electron mobility of 6.4×103 cm2/Vs, 3.11×104 cm2/Vs, and 3.45×104 cm2/Vs at room temperature, 77 and 20K, respectively. The effects of the different scattering mechanisms on luminescence linewidth and electron mobility have also been discussed.

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Authors and Affiliations

  1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, 200083, Shanghai, Peoples Republic of China

    W. Z. Shen, W. G. Tang & S. C. Shen

  2. Foundation for Research and Technology-Hellas, Heraklion, P.O. Box 1527, 71110, Crete, Greece

    A. Dimoulas

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  1. W. Z. Shen
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  2. W. G. Tang
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  3. S. C. Shen
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  4. A. Dimoulas
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Shen, W.Z., Tang, W.G., Shen, S.C. et al. Optical and transport properties of δ-doped pseudomorphic AlGaAs/InGaAs/GaAs structures. Int J Infrared Milli Waves 15, 1809–1818 (1994). https://doi.org/10.1007/BF02096051

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  • DOI: https://doi.org/10.1007/BF02096051

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