Two new internal friction peaks have been observed in single-crystal silicon in the temperature range from 100 to 270 K of the Arrhenius-type relaxation at kilohertz frequencies. The activation energies of the two peaks are 0.14 and 0.20 eV. We attribute them to vibration of trapped interstital oxygen and the oxygen-vacancy complex, respectively.
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Lam, C.C., Douglass, D.H. Observation of oxygen impurities in single-crystal silicon by means of internal friction. J Low Temp Phys 44, 259–264 (1981). https://doi.org/10.1007/BF00120776
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DOI: https://doi.org/10.1007/BF00120776