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Iodine- and Bromine-Based Dry Etching of LaCaMnO3

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Abstract

Two novel plasma chemistries, BI 3 and BBr 3 , have been employed for dry etching of LaCaMnO 3 thin films. For both mixtures there is some chemical enhancement of etch rates at low halide compositions in the discharge, and the rates are a strong function of ion/neutral ratio. Maximum rates are obtained at ratios near 0.02. Etch yields are typically low (<0.3) under inductively-coupled plasma (CICP) conditions. Smooth d surface morphologies are obtained over a wide range of conditions, with high-fidelity pattern transfer using SiO 2 or SiN x masks.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida, 32611

    J. J. Wang, H. Cho, J. R. Childress & S. J. Pearton

  2. Department of Physics, University of Florida, Gainesville, Florida

    F. Sharifi

  3. Center for Materials Research and Technology, Florida State University, Tallahassee, Florida

    K. H. Dahmen & E. S. Gillman

Authors
  1. J. J. Wang
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  2. H. Cho
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  3. J. R. Childress
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  4. S. J. Pearton
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  5. F. Sharifi
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  6. K. H. Dahmen
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  7. E. S. Gillman
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Wang, J.J., Cho, H., Childress, J.R. et al. Iodine- and Bromine-Based Dry Etching of LaCaMnO3 . Plasma Chemistry and Plasma Processing 19, 229–239 (1999). https://doi.org/10.1023/A:1021643709200

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  • DOI: https://doi.org/10.1023/A:1021643709200

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