Abstract
We studied the magnetic field-tuned superconductor-insulator transition (SIT) in amorphous In-O films with different oxygen contents and, hence, different electron densities. Whereas the two-dimensional scaling behavior was confirmed for the states of the film near the zero-field SIT, the SIT scenario changed for the deeper states in the superconducting phase; in addition to the scaling function describing the conductivity of the fluctuation-induced Cooper pairs, the temperature-dependent contribution to the film resistance emerged. This contribution can originate from the conductivity of normal electrons.
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From Pis’ma v Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 71, No. 4, 2000, pp. 231–237.
Original English Text Copyright © 2000 by Gantmakher, Golubkov, Dolgopolov, Tsydynzhapov, Shashkin.
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Gantmakher, V.F., Golubkov, M.V., Dolgopolov, V.T. et al. Scaling analysis of the magnetic field-tuned quantum transition in superconducting amorphous In-O films. Jetp Lett. 71, 160–164 (2000). https://doi.org/10.1134/1.568304
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DOI: https://doi.org/10.1134/1.568304