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Equilibrium configurations of partial misfit dislocations in thin-film heterosystems

  • Defects. Dislocations. Physics of Strength
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Abstract

The energy characteristics of orthogonal rows of partial misfit dislocations with V-shaped stacking faults in thin-film heteroepitaxial systems are analyzed theoretically. It is shown that they should appear only in very thin epitaxial films of nanoscopic thickness and for high values of the mismatch exceeding a definite value. Under these conditions partial misfit dislocations associated with V-shaped stacking faults are typical elements of the defect structure of nanolayer heterosystems. For smaller mismatches and larger films thicknesses total misfit dislocations should form.

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Authors and Affiliations

  1. Institute of Machine Engineering, Russian Academy of Sciences, 199178, St. Petersburg, Russia

    M. Yu. Gutkin, K. N. Mikaelyan & I. A. Ovid’ko

Authors
  1. M. Yu. Gutkin
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  2. K. N. Mikaelyan
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  3. I. A. Ovid’ko
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Fiz. Tverd. Tela (St. Petersburg) 40, 2059–2064 (November 1998)

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Gutkin, M.Y., Mikaelyan, K.N. & Ovid’ko, I.A. Equilibrium configurations of partial misfit dislocations in thin-film heterosystems. Phys. Solid State 40, 1864–1869 (1998). https://doi.org/10.1134/1.1130674

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  • DOI: https://doi.org/10.1134/1.1130674

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