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NMR line shift of gallium in GaAs crystals in the temperature range 160–360 K

  • Semiconductors and Insulators
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Abstract

The shift in the nuclear magnetic resonance (NMR) line of 71Ga isotopes in GaAs crystals is investigated in the temperature range 160–360 K. It is observed that the position of the resonance line is temperature-independent. The value of the shift relative to an isolated nucleus is 440 and 420 ppm for the three samples investigated. The roles of various contributions to the NMR line shift are discussed.

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Authors and Affiliations

  1. Leipzig University, D-04103, Leipzig, Germany

    W. D. Hoffmann & D. Michel

  2. Scientific Institute for Physics Research of the St. Petersburg State Technical University, 198904, Petrodvorets, Russia

    I. G. Sorina & E. V. Charnaya

Authors
  1. W. D. Hoffmann
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  2. D. Michel
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  3. I. G. Sorina
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  4. E. V. Charnaya
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Additional information

Fiz. Tverd. Tela (St. Petersburg) 40, 1418–1419 (August 1998)

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Hoffmann, W.D., Michel, D., Sorina, I.G. et al. NMR line shift of gallium in GaAs crystals in the temperature range 160–360 K. Phys. Solid State 40, 1288–1289 (1998). https://doi.org/10.1134/1.1130545

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  • DOI: https://doi.org/10.1134/1.1130545

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