Abstract
A reliable technique of local chemical characterization of multicomponent semiconductor solid solutions has been developed, and the possibility of its application to the SnTe-SnSe quaternary solid solutions doped with 16 at.% In verified. The behavior of the electrical resistivity of samples of these solid solutions at low temperatures, 0.4–4.2 K, has been studied. The critical temperature T c and the second critical magnetic field H c2 of the superconducting transition and their dependences on the solid-solution composition have been determined. The superconducting transition at T c≈2–3 K is due to hole filling of the In-impurity resonance states, and the observed variation of the superconducting transition parameters with increasing Se content in the solid solution is related to the extrema in the valence band and the In band of resonance states shifting with respect to one another.
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Fiz. Tverd. Tela (St. Petersburg) 41, 612–617 (April 1999)
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Moshnikov, V.A., Moshnikov, A.V., Rumyantseva, A.I. et al. X-ray microanalysis of quaternary semiconductor solid solutions and its application to the (SnTe-SnSe):In system. Phys. Solid State 41, 550–555 (1999). https://doi.org/10.1134/1.1130822
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DOI: https://doi.org/10.1134/1.1130822