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Photoluminescence of InSb quantum dots in GaAs and GaSb matrices

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Abstract

The photoluminescent properties of quantum dots formed in the deposition of an InSb thin film (1–3 monolayers) on GaAs(100) and GaSb(100) surface are investigated. The results indicate the importance of As-Sb substitution reactions in the formation of quantum dots on a GaAs surface.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. F. Tsatsul’nikov, N. N. Ledentsov, M. V. Maksimov, B. Ya. Mel’tser, P. V. Neklyudov, S. V. Shaposhnikov, B. V. Volovik, I. L. Krestnikov, A. V. Sakharov, N. A. Bert, P. S. Kop’ev & Zh. I. Alferov

  2. Institute für Festkörperphysik, Technische Universität Berlin, D-10623, Berlin, Germany

    D. Bimberg

Authors
  1. A. F. Tsatsul’nikov
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  2. N. N. Ledentsov
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  3. M. V. Maksimov
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  4. B. Ya. Mel’tser
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  5. P. V. Neklyudov
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  6. S. V. Shaposhnikov
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  7. B. V. Volovik
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  8. I. L. Krestnikov
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  9. A. V. Sakharov
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  10. N. A. Bert
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  11. P. S. Kop’ev
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  12. Zh. I. Alferov
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  13. D. Bimberg
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Additional information

Fiz. Tekh. Poluprovodn. 31, 68–71 (January 1997)

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Tsatsul’nikov, A.F., Ledentsov, N.N., Maksimov, M.V. et al. Photoluminescence of InSb quantum dots in GaAs and GaSb matrices. Semiconductors 31, 55–57 (1997). https://doi.org/10.1134/1.1187086

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  • DOI: https://doi.org/10.1134/1.1187086

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