Skip to main content
SpringerLink
Log in

Deep centers and negative temperature coefficient of the breakdown voltage of SiC p-n structures

  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

The temperature coefficient of the breakdown voltage of 6H-SiC p-n structures has been investigated. It is shown that the temperature dependence of the breakdown voltage can be explained by charge exchange on deep acceptor levels in the space charge layer. The computational results are in good agreement with the experimental data obtained for boron-doped 6H-SiC p-n structures.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. A. O. Konstantinov, D. P. Litvin, and V. I. Sankin, Pis’ma Zh. Tekh. Fiz. 7, 1335 (1981) [Sov. Tech. Phys. Lett. 7, 572 (1981)].

    Google Scholar 

  2. Yu. A. Vodakov, A. O. Konstantinov, D. P. Litvin, and V. I. Sankin, Pis’ma Zh. Tekh. Fiz. 7, 705 (1981) [Sov. Tech. Phys. Lett. 7, 650 (1981)].

    Google Scholar 

  3. A. P. Dmitriev, A. O. Konstantinov, and D. P. Litvin, Fiz. Tekh. Poluprovodn. 17, 1093 (1983) [Sov. Phys. Semicond. 17, 686 (1983)].

    Google Scholar 

  4. M. M. Anikin, S. N. Vainshtein, M. E. Levinshteiin, A. M. Strel’chuk, and A. L. Syrkin, Fiz. Tekh. Poluprovodn. 22, 545 (1988) [Sov. Phys. Semicond. 22, 390 (1988)].

    Google Scholar 

  5. M. M. Anikin, M. E. Levinshtein, I. V. Popov, V. P. Rastegaev, A. M. Strel’chuk, and A. L. Syrkin, Fiz. Tekh. Poluprovodn. 22, 1574 (1988) [Sov. Phys. Semicond. 22, 995 (1988)].

    Google Scholar 

  6. A. S. Kyuregyan and P. N. Shlygin, Fiz. Tekh. Poluprovodn. 23, 1164 (1989) [Sov. Phys. Semicond. 23, 729 (1989)].

    Google Scholar 

  7. E. V. Astrova, V. M. Volle, V. B. Voronkov, V. A. Kozlov, and A. A. Lebedev, Fiz. Tekh. Poluprovodn. 20, 2122 (1986) [Sov. Phys. Semicond. 20, 1308 (1986)].

    Google Scholar 

  8. M. M. Anikin, A. A. Lebedev, S. N. Pyatko, A. M. Strelchuk, and A. L. Syrkin, Mater. Sci. Eng. 11, 113 (1992).

    Article  Google Scholar 

  9. A. A. Lebedev, A. N. Andreev, A. A. Mal’tsev, M. G. Rastegaeva, N. S. Savkina, and V. E. Chelnokov, Fiz. Tekh. Poluprovodn. 29, 1635 (1995) [Semiconductors 29, 850 (1995)].

    Google Scholar 

  10. M. S. Mazzola, S. E. Saddow, P. G. Neudeck, V. K. Lakdawala, and S. We, Appl. Phys. Lett. 64, 2730 (1994).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. A. Lebedev

  2. CEGELY-INSA-Bat. 401-20, av. A. Einstein-F., 69621, Villerbanne Cedex, France

    S. Ortoland, C. Raynaud, M. L. Locatelli, D. Planson & J. P. Chante

Authors
  1. A. A. Lebedev
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. S. Ortoland
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. C. Raynaud
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. M. L. Locatelli
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. D. Planson
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. J. P. Chante
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Fiz. Tekh. Poluprovodn. 31, 866–868 (July 1997)

Rights and permissions

Reprints and permissions

About this article

Cite this article

Lebedev, A.A., Ortoland, S., Raynaud, C. et al. Deep centers and negative temperature coefficient of the breakdown voltage of SiC p-n structures. Semiconductors 31, 735–737 (1997). https://doi.org/10.1134/1.1187080

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1187080

Keywords

Search

Navigation