Abstract
New possibilities of scanning electron microscopy, using secondary-and reflected-electron signals, for determining the position of heteroboundaries in long-wavelength laser structures are reported. The formation of the indicated signals in structures of mid-infrared-range lasers of a new type based on type-II GaInAsSb/InGaAsSb heterostructures as well as in the conventional InAsSb/InAsSbP heterostructures is analyzed. The observed characteristic features of the formation of secondary-and reflected-electron signals in these structures as compared with the well-studied AlGaAs/GaAs structures are explained. The results obtained are necessary for accurate determination of an important laser parameter — the position of the p-n junction. It is shown that it is best to use the reflected-electron signal.
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Fiz. Tekh. Poluprovodn. 32, 1300–1305 (November 1998)
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Solov’ev, V.A., Mikhailova, M.P., Moiseev, K.D. et al. Scanning electron microscopy of long-wavelength laser structures. Semiconductors 32, 1157–1161 (1998). https://doi.org/10.1134/1.1187581
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DOI: https://doi.org/10.1134/1.1187581