Article PDF
Use our pre-submission checklist
Avoid common mistakes on your manuscript.
Author information
Authors and Affiliations
Additional information
The online version of the original article can be found at http://dx.doi.org/10.1134/1.1187579
Rights and permissions
About this article
Cite this article
Katsavets, N.I., Laws, G.M., Harrison, I. et al. Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, No. 10, 1048 (October 1998)]. Semiconductors 32, 1256 (1998). https://doi.org/10.1134/1.1187604
Issue Date:
DOI: https://doi.org/10.1134/1.1187604