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Investigation of the effect of surface treatment of a semiconductor on the characteristics of 6H-SiC Schottky diodes

  • Semiconductor Structures, Interfaces and Surfaces
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Abstract

Capacitance methods are used to investigate Schottky diodes formed on the basis of epitaxial n-type 6H-SiC layers grown by vapor-phase epitaxy. It is found that the height of the potential barrier and its dependence on the work function of the metal strongly depend on the method used for surface treatment of the semiconductor.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. A. Lebedev, D. V. Davydov, V. V. Zelenin & M. L. Korogodskii

Authors
  1. A. A. Lebedev
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  2. D. V. Davydov
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  3. V. V. Zelenin
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  4. M. L. Korogodskii
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Additional information

Fiz. Tekh. Poluprovodn. 33, 959–961 (August 1999)

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Lebedev, A.A., Davydov, D.V., Zelenin, V.V. et al. Investigation of the effect of surface treatment of a semiconductor on the characteristics of 6H-SiC Schottky diodes. Semiconductors 33, 875–876 (1999). https://doi.org/10.1134/1.1187802

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  • DOI: https://doi.org/10.1134/1.1187802

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