Skip to main content
SpringerLink
Log in

TeCd antistructural defects in CdTe crystals

  • Published:
Technical Physics Letters Aims and scope Submit manuscript

Abstract

Two-temperature annealing with a controlled vapor pressure of tellurium P Te2 is used to study CdTe〈Cl〉 crystals under conditions of high-temperature thermodynamic equilibrium of the crystal with the gas phase (735–940 °C). For low pressures P Te2 (≥P min) ClTe+ begins to condense because of the formation of VCd −2 in the crystal. As P Te2 increases, this mechanism of exact self-compensation no longer operates because of the formation of TeCd+ intrinsic antistructural point defects.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. F. A. Kröger, The Chemistry of Imperfect Crystals (Wiley, New York 1964) [Russ. transl., Mir, Moscow, (1969)].

    Google Scholar 

  2. R. O. Bell, F. V. Wald, C. Canaly, F. Nava, and G. Ottavian, IEEE Trans. Nucl. Sci. NS-21, 331 (1974).

    Google Scholar 

  3. O. A. Matveev and A. I. Terent’ev, Fiz. Tekh. Poluprovodn. 27, 1894 (1993) [Semiconductors 27, 1043 (1993)].

    Google Scholar 

  4. G. Mandel, Phys. Rev. A 134, 1073 (1964).

    ADS  MathSciNet  Google Scholar 

  5. J. A. Van Vechten, J. Electrochem. Soc. 122, 423 (1975).

    Google Scholar 

  6. V. N. Martynov and S. P. Kobeleva, Kristallographiya 28, 394 (1983) [Sov. Phys. Crystallogr. 28, 232 (1983)].

    Google Scholar 

  7. M. A. Berding, M. van Schiltfgaarde, M. Paxton, and A. Sher, J. Vac. Soc. Technol. A 8, 1103 (1990).

    ADS  Google Scholar 

  8. V. M. Glazov and L. P. Pavlova, Neorg. Mater. 30, 629 (1994).

    Google Scholar 

  9. C. G. Morgan-Pond and R. Raghaven, Phys. Rev. B 31, 6616 (1985).

    Article  ADS  Google Scholar 

  10. J. T. Schick and C. G. Morgan-Pond, J. Vac. Sci. Technol. A 8, 1108 (1990).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

    O. A. Matveev & A. I. Terent’ev

Authors
  1. O. A. Matveev
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. I. Terent’ev
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Pis’ma Zh. Tekh. Fiz. 23, 30–34 (February 26, 1997)

Rights and permissions

Reprints and permissions

About this article

Cite this article

Matveev, O.A., Terent’ev, A.I. TeCd antistructural defects in CdTe crystals. Tech. Phys. Lett. 23, 140–141 (1997). https://doi.org/10.1134/1.1261564

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1261564

Keywords

Search

Navigation